View SMBD7000_254048.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Silicon Switching Diode Array
For high-speed switching applications q Connected in series
q
SMBD 7000
Type SMBD 7000
Marking s5C
Ordering Code (tape and reel) Q68000-A8440
Pin Configuration
Package1) SOT-23
Maximum Ratings Parameter Reverse voltage Peak reverse voltage Forward current Surge forward current, t = 1 s Total power dissipation, TS = 31 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS

Symbol VR VRM IF IFS Ptot Tj Tstg
Values 100 100 200 4.5 330 150 - 65 ... + 150
Unit V mA A mW C
500 360
K/W
1) 2)
For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91
SMBD 7000
Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Breakdown voltage Forward voltage IF = 1 mA IF = 10 mA IF = 100 mA Reverse current VR = 50 V VR = 100 V VR = 50 V, TA = 125 C AC characteristics Diode capacitance VR = 0, f = 1 MHz Reverse recovery time IF = 10 mA, IR = 10 mA, RL = 100 Test circuit for reverse recovery time CD trr - - - - 2 15 pF ns V(BR) VF 550 670 750 IR - - - - - - 300 500 100 nA nA
A
Values typ. max.
Unit
100
- - - -
- 700 820 1100
V mV
Pulse generator: tp = 100 ns, D = 0.05 tr = 0.6 ns, Rj = 50
Oscillograph:
R = 50 tr = 0.35 ns C 1 pF
Semiconductor Group
2
SMBD 7000
Forward current IF= f (TA*; TS) * Package mounted on epoxy
Reverse current IR = f (TA)
Forward current IF = f (VF) TA = 25 C
Peak forward current IFM = f (t) TA = 25 C
Semiconductor Group
3
SMBD 7000
Forward voltage VF = f (TA)
Semiconductor Group
4

▲Up To Search▲

Price & Availability of SMBD7000

	To Download SMBD7000 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .